Recently, Professors Wei Wei and Zhou Peng of the School of Microelectronics of Fudan University have implemented a subversive prototype of a two-dimensional semiconductor quasi-non-volatile storage device, which has created a third storage technology and has been written 10,000 times faster than current U disk. The data storage time can also be determined by itself. This solves the difficult problem of "write speed" and "non-volatile" in international semiconductor charge storage technology.
Faster than U diskNew control of data storage
It is understood that there are two main types of semiconductor charge storage technology. The first type is volatile memory, such as memory in a computer. The data will disappear immediately after a power failure. The second type is non-volatile memory, such as commonly used U. Disk, no extra energy can be stored for 10 years after writing data. The former can write data in about a few nanoseconds, and the second type of charge storage technology takes several microseconds to tens of microseconds to save the data.
The new charge storage technology developed this time not only satisfies the speed of writing data of 10 nanoseconds, but also realizes the quasi-non-volatile characteristics of on-demand (10 seconds to 10 years) adjustable data. This new feature not only can greatly reduce storage power consumption in high-speed memory, but also can naturally disappear after the expiration date of data, and solves the contradiction between confidentiality and transmission in special application scenarios.
New 2D Material Combination
“This research innovatively selected multiple layers of two-dimensional materials to form a semi-floating gate structure transistor: molybdenum disulfide, tungsten diselenide, and germanium disulfide for switching charge transport and storage, respectively, and boron nitride as tunneling. Layer, made of van der Waals heterojunction of the ladder-valley structure." Zhou Peng said that choosing these two-dimensional materials will give full play to the rich energy band characteristics of two-dimensional materials. “A part of the same door that can be switched on and off is easy to access, and the other part is like a wall with a tight, airtight surface, and it is difficult for electrons to enter and exit. The regulation of 'writing speed' and 'non-volatile' is due to The proportion of these two parts."
Write speed is 10,000 times faster than current U disk, data refresh time is 156 times that of memory technology, and it has excellent controllability. It can realize the design of memory structure according to the data effective time requirements... After testing, the researchers found that this is based on the full The new heterojunction of two-dimensional materials enables a new class III storage feature. In 2017, the team reported in Small on the use of the rich energy band structure characteristics of two-dimensional semiconductors to solve the “over-erase†phenomenon in charge storage technology. Later in the memory study, the team found that when using two-dimensional semiconductors to achieve the storage of new structures, there will be more "strange new features."
The discovery of two-dimensional materials in graphene reveals that there is a strong chemical bond in the plane, and layers are stacked together by intermolecular forces. Therefore, a two-dimensional material can obtain a single layer of atomic-level crystals with perfect interface properties.
At the same time it is a complete system of conductors, semiconductors and insulators. This has great potential for further miniaturization of integrated circuit devices and increasing integration, stability, and development of new types of memory. It is a new way to reduce memory power consumption and increase integration. The quasi-non-volatile memory based on two-dimensional semiconductors can realize high-density integration on the basis of large-scale synthesis technology, and will play an important role in many fields such as extremely low-power high-speed storage and utilization of data validity periods.
From the technical definition, structural model to the whole process of performance analysis, this scientific breakthrough was independently completed by the research team of Fudan University. Based on the local community and rooted in China, the team achieved an important scientific breakthrough in the field of future storage technology in the world, and published it in the form of a long article in Nature Nanotechnology.
Liu Chunsen, a doctoral student at the School of Microelectronics of Fudan University, and Professor Zhou Peng, the instructor, were the co-first authors. Prof. Zhang Wei and Prof. Zhou Peng were the authors of the correspondence, and the State Key Laboratory of Application Specific Integrated Circuits and Systems of Fudan University was the only unit. This work was supported by the National Natural Science Foundation's Outstanding Youth Project and the Key Research Project.
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