After more than 10 years of sinking, the next-generation memory products include FRAM (ferroelectric memory), MRAM (magnetoresistive random access memory), and RRAM (variable resistance memory), driven by the Internet of Things and smart applications. , began to find the niche market.
In May 2017, TSMC’s chief technology officer Sun Yuancheng first published its own eMRAM (embedded magnetoresistive random access memory) and eRRAM (embedded resistive memory) technologies at its technical forum for the first time. Pilot trials will be conducted in 2018 and 2019 and advanced 22nm processes will be used.
The goal of research and development of this technology is very clear, is to achieve higher efficiency, lower power consumption, and smaller size, in order to meet the full-scale computing needs of the future of intelligent and all things. Samsung and Intel are currently involved in research and development of related products and process technology.
The embedded memory process is at the wafer level where the foundry integrates the logic ICs and memory chips in the same chip. This design can not only achieve the best transmission performance, but also reduce the size of the chip, through a chip to achieve the computing and storage functions, and this for the IoT device often requires data operations and data storage, very is attractive.
Take TSMC as an example, their main market is locking in the Internet of Things, high-performance computing and automotive electronics.
However, current mainstream flash memory uses charge storage as its basis for data writing. Therefore, its durability and reliability are below 20 nm, and a large decline will occur. Therefore, it is not suitable for advanced process SoC design. Although software corrections and algorithmic corrections can be made, these techniques are not easy to convert in an embedded system architecture. Therefore, the next-generation memory whose structure is more suitable for miniaturization becomes the mainstream of advanced SoC design.
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