Recently, Vishay Intertechnology, Inc. (NYSE stock code: VSH) announced the launch of the new dual-chip 20V P-channel third-generation TrenchFET? power MOSFET --- SiA923EDJ . The new device is available in a thermally enhanced PowerPAK® SC-70 package with a 2mm x 2mm footprint and an 8V gate-to-source voltage and the lowest on-resistance that can be achieved with dual-chip P-channel devices to date.
The new SiA923EDJ can be used in DC-DC converters as well as charging and load switches in handheld devices such as smartphones, MP3 players, tablets and e-books. Lower MOSFET on-resistance means lower conduction losses, saving power in these devices and extending battery life between charges.
The SiA923EDJ has ultra-low on-resistance of 54mΩ, 70mΩ, 104mΩ, and 165mΩ at 4.5V, 2.5V, 1.8V, and 1.5V, respectively. P-channel devices with 8V gate-source voltage ratings and closest performance have on-resistances of 60mΩ, 80mΩ, 110mΩ, and 170mΩ at 4.5V, 2.5V, 1.8V, and 1.5 V, 10%, 12% higher than SiA923EDJ, respectively. , 5% and 3%.
The MOSFET is turned on at 1.5V, allowing it to work with lower voltage gate drivers commonly used in handheld devices and lower bus voltages without wasting space and cost on level shifting circuits. The low on-resistance of the SiA923EDJ allows it to have a lower voltage drop at peak currents, which better prevents unwanted undervoltage lockout events. The compact 2mm x 2mm PowerPAK SC-70 package is only half the size of the TSOP-6, and the on-resistance is similar or better, and it dissipates 65% more heat under the same environmental conditions.
The SiA923EDJ has undergone 100% Rg testing in accordance with the halogen-free specification of IEC 61249-2-21 and the RoHS Directive 2002/95/EC. Typical ESD protection for MOSFETs is up to 2500V.
The SiA923EDJ complements the previously announced 20V SiA921EDJ P-channel MOSFET with a 12V maximum gate-to-source voltage rating. With the release of the SiA923EDJ, designers can now choose the right product from a SiA921EDJ with a higher gate drive voltage or a device with a lower threshold voltage and lower on-resistance.
Samples and production quantities of the new SiA923EDJ TrenchFET power MOSFETs are available now, with lead times of 14 to 16 weeks for larger orders.
HD Slip Ring is an electromechanical device. It allows the transmission of power and signals from a stationary to a rotating structure. It consists of an electrically conductive rotating ring, with one or more stationary contacts. They are called "stations" or "spokes". Electrical signals (power and/or data) are transmitted through the slip ring. This is done by means of brushes that make contact with the ring.
It is typically used where there is a need to rotate one object relative to another. Especially for passing power and/or signals from the stationary object to the rotating object.
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