Chinese and English comparison of common diode parameter symbols and meanings:
CT---barrier capacitance
Cj---junction (interelectrode) capacitance, indicating the total capacitance of the é”—detection diode under the specified bias voltage across the diode
Cjv---bias junction capacitance
Co---zero bias capacitor
Cjo---zero bias junction capacitance
Cjo/Cjn---junction capacitance change
Cs---shell capacitor or package capacitor
Ct---total capacitance
CTV---voltage temperature coefficient. Ratio of relative change in steady voltage to absolute change in ambient temperature at test current
CTC---capacitor temperature coefficient
Cvn---nominal capacitance
IF---forward DC current (forward test current).é”—Detector diode passes the current between the poles under the specified forward voltage VF; the maximum operating current (average value) that the silicon rectifier and the silicon stack are allowed to pass continuously in the sine half wave under the specified use conditions, the silicon switch The maximum forward DC current that the diode is allowed to pass at rated power; the current given when the forward voltage parameter of the Zener diode is measured
IF(AV)---forward average current
IFM(IM)---forward peak current (forward maximum current). The maximum forward pulse current allowed through the diode at rated power. LED limit current.
IH---constant current, holding current.
Ii--- LED illuminating current
IFRM---forward repeat peak current
IFSM---positive peak current (surge current)
Io---rectifying current. Operating current through specified frequency and specified voltage conditions in a particular line
IF(ov)---forward overload current
IL---Photocurrent or steady current diode limiting current
ID---dark current
Base modulation current in IB2---single junction transistor
IEM---emitter peak current
IEB10---Reverse current between the emitter and the first base in a double-base single-junction transistor
IEB20---Emitter current in double base single junction transistor
ICM---Maximum output average current
IFMP---positive pulse current
IP---peak current
IV---valley current
IGT---thyristor gate trigger current
IGD---thyristor control pole does not trigger current
IGFM---control positive peak current
IR(AV)---reverse average current
IR (In) - reverse DC current (reverse leakage current). When measuring the reverse characteristic, the given reverse current; the silicon stack is in the sinusoidal half-wave resistive load circuit, the current passed when the reverse voltage is specified; the reverse polarity of the silicon switching diode plus the reverse operating voltage VR The current passed through; the leakage current generated by the Zener diode under reverse voltage; the leakage current of the rectifier at the highest reverse operating voltage of the sine half-wave.
IRM---reverse peak current
IRR---Thyristor Reverse Repeated Average Current
IDR---thyristor off-state average repeat current
IRRM---reverse repeat peak current
IRSM---reverse peak current (reverse surge current)
Irp---reverse recovery current
Iz---stabilize voltage and current (reverse test current). Given reverse current when testing reverse electrical parameters
Izk---Stabilized tube knee current
IOM---maximum forward (rectifier) ​​current. The maximum forward instantaneous current that can withstand under specified conditions; the maximum operating current that allows continuous conduction through the 锗-detection diode in a sinusoidal half-wave rectification circuit with resistive load
IZSM---Zener diode surge current
IZM---Maximum regulated current. Current that the Zener diode allows to pass at maximum dissipated power
iF---forward total instantaneous current
iR---reverse total instantaneous current
Ir---reverse recovery current
Iop---working current
Is--- steady current diode steady current
f---frequency
N---capacitance change index; capacitance ratio
Q---good value (quality factor)
Δvz---voltage regulator voltage drift
Di/dt---on-state current critical rise rate
Dv/dt---on-state voltage critical rise rate
PB---withstand pulse burnout power
PFT (AV) --- forward conduction average power dissipation
PFTM---positive peak power dissipation
PFT---positive conduction total instantaneous power dissipation
Pd---dissipated power
PG---gate average power
PGM---gate peak power
PC---control pole average power or collector dissipation power
Pi---input power
PK---maximum switching power
PM---rated power. The maximum power that a silicon diode can withstand no more than 150 degrees
PMP---maximum leakage pulse power
PMS---maximum pulse power
Po---output power
PR---reverse surge power
Ptot---total dissipated power
Pomax---maximum output power
Psc---continuous output power
PSM---Do not repeat surge power
PZM---Maximum dissipated power. The maximum power that the Zener diode is allowed to withstand for a given service condition
RF(r)---forward differential resistance. In the forward conduction, the current exhibits significant nonlinear characteristics as the voltage index increases. Under a certain forward voltage, the voltage increases by a small amount ΔV, and the forward current increases by ΔI, then ΔV/△I is called differential resistance.
RBB---base resistance between double base transistors
RE---RF resistance
RL---load resistor
Rs(rs)----Series resistance
Rth----thermal resistance
R(th)ja----thermal resistance from junction to environment
Rz(ru)---dynamic resistance
R(th)jc---junction-to-shell thermal resistance
r δ---attenuation resistor
r(th)---transient resistance
Ta---ambient temperature
Tc---shell temperature
Td---delay time
Tf---fall time
Tfr---forward recovery time
Tg---circuit commutation shutdown time
Tgt---gate gate opening time
Tj---junction temperature
Tjm---highest junction temperature
Ton---opening time
Toff---off time
Tr---rise time
Trr---reverse recovery time
Ts---storage time
Tstg---temperature storage diode storage temperature
a---temperature coefficient
Λp---luminescence peak wavelength
△ λ---spectral half width
η---single junction transistor divider ratio or efficiency
VB---reverse peak breakdown voltage
Vc---rectified input voltage
VB2B1---base voltage
VBE10---emitter and first base reverse voltage
VEB---saturated pressure drop
VFM---maximum forward voltage drop (forward peak voltage)
VF---forward voltage drop (forward DC voltage)
â–³VF---positive pressure drop difference
VDRM---off state repeated peak voltage
VGT---gate trigger voltage
VGD---gate does not trigger voltage
VGFM---gate positive peak voltage
VGRM---gate reverse peak voltage
VF (AV) --- positive average voltage
Vo---AC input voltage
VOM---Maximum output average voltage
Vop---working voltage
Vn---center voltage
Vp---peak point voltage
VR---reverse working voltage (reverse DC voltage)
VRM---reverse peak voltage (highest test voltage)
V(BR)---breakdown voltage
Vth---valve voltage (threshold voltage)
VRRM---reverse repeat peak voltage (reverse surge voltage)
VRWM---reverse working peak voltage
V v---valley voltage
Vz---stable voltage
â–³Vz---voltage range voltage increment
Vs---to voltage (signal voltage) or steady current tube to stabilize current and voltage
Av---voltage temperature coefficient
Vk---Knee point voltage (steady current diode)
VL --- limit voltage
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